dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 1 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product n - channel enhancement mode field mosfet product summary v (br)dss r ds(on) i d t a = + 25 c 6 0v 3.0 ? @ v gs = 10v 400 ma 4 .0? @ v gs = 5 v 330 ma description and applications thi s new generation mosfet is designed to minimize the on - sta te resistance (r ds( on ) ) and yet maintain superior switching perfor mance, making it ideal for high - efficiency power - management applications. ? dc - dc converters ? power m anagement f unctions ? battery operated systems and solid - state relays drivers: relays, soleno ids, lamps, hammers, displays, memories, transistors, etc. features and benefits ? n - channel mosfet ? low on - resistance ? low gate - threshold voltage ? low - input capacitance ? fast switching speed ? small - surface mount package ? esd protected gate, 1.2kv hbm ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. "green" dev ice (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: x1 - dfn1006 - 3 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C nipdau over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.001 grams ( a pproximate) ordering information (note 4 ) part number case packa ging dmn65d8lfb - 7 x1 - dfn1006 - 3 3 , 000/tape & reel dmn65d8lfb - 7 b x1 - dfn1006 - 3 10 , 000/tape & reel notes : 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_fr ee.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website a t http://www.diodes.com . x1 - dfn1006 - 3 bottom view equivalent circuit top view pin configuration esd protected to 1.2kv source body diode gate protection diode gate drain d s g e4
dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 2 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product marking information dmn65d8lfb - 7 dmn65d8lfb - 7b x1 = part mar king code x1 x1 x1 top view bar denotes gate and source side x1 x1 x1 x1 top view bar denotes gate and source side x1 from date code 1527 (yyww), this changes to : x1 top view dot denotes drain side x1 x1 x1
dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 3 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product maximum ratings characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss ? gs = 10v steady state t a = + 25 c t a = + 70 c i d 260 210 ma continuous drain current (note 5 ) v gs = 10v steady state t a = + 25 c t a = + 70 c i d 400 310 ma thermal characteristics characteristic symbol value units power dissipation , @ t a = + 25c (note 4 ) p d 43 0 mw thermal resistance , junction to ambient @ t a = + 25c (note 4 ) r ? ja 290 c/w power dissipation, @ t a = + 25c (note 5 ) p d 840 mw thermal resistance, junction to ambient @ t a = + 25c (note 5 ) r ? j s a 147 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical characteristics (@ t a = + 25 c , unless otherwise spe cified .) characteristic symbol min typ max unit test condition off characteristics (note 6) drain - source breakdown voltage bv dss 6 0 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = + 25 c i dss - - 0. 1 a v ds = 6 0v, v gs = 0v gate - body le akage i gss - - ? gs = ? ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) 1.2 - 2.0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - - 3.0 4 .0 ? gs = 10 v, i d = 0.115a v gs = 5v, i d = 0.1 115 a for ward transfer admittance |y fs | 80 320 - ms v ds = 10 v, i d = 0. 1 15 a diode forward voltage v sd - 0.7 1. 2 v v gs = 0v, i s = 0.115 a dynamic characteristics (note 7) input capacitance c iss - 2 5 - pf v ds = 25 v , v gs = 0v, f = 1.0mhz output capacitance c oss - 4 . 7 - pf reverse transfer capacitance c rss - 2.5 - pf turn - on delay time t d(on) - 3.27 - ns v d d = 30 v, v g en = 10 v, r g en = 25 d = 0. 115 a turn - on rise time t r - 3.15 - ns turn - off delay time t d(off) - 12.02 5 - ns turn - off fall time t f - 6.29 - ns notes: 4. device mounted on fr - 4 pcb with minimum recommended pad layout, single - sided. 5 . device mounted on 2 x 2 fr - 4 pcb with high coverage 2 oz. copper, single - sided . 6. short duration pulse test used to minimize self - heating effect. 7. guaranteed by design. not subject to production testing.
dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 4 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage (v) ds fig.1 typical output characteristics v =2.5v gs v =3.0v gs v =3.5v gs v =4.0v gs v =4.5v gs v =5.0v gs v =10v gs 0.01 0.1 1 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage gs fig. 2 typical transfer characteristics v = 5.0v ds t =-55 c a ? t =25 c a ? t =85 c a ? t =125 c a ? t =150 c a ? i , d r a i n c u r r e n t ( a ) d 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.1 0.2 0.3 0.4 0.5 0.6 i , drain-source current (a) fig. 3 typical on-resistance vs. drain current and gate charge d v =5v gs v =10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 tj, junction temperature ( c) fig. 4 on-resistance variation with temperature ? v =10v, i =115ma gs d v =5v, i =115ma gs d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 tj, junction temperature (c) fig. 5 gate threshold variation vs. ambient temperature i =250a d i =1ma d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 v , drain-source voltage fig. 6 typical junction capacitance ds f=1mhz c iss c oss c rss c , j u n c t i o n c a p a c i t a n c e ( p f ) t
dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 5 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product package outline dimensi ons please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. x1 - dfn1006 - 3 dim min max typ a 0.47 0.53 0.50 a1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e - - 0.35 l1 0.20 0.3 0 0.25 l2 0.20 0.30 0.25 l3 - - 0.40 z 0.02 0.08 0.05 all dimensions in mm dimensions value (in mm) c 0.70 g1 0.3 0 g2 0.2 0 x 0. 40 x1 1.10 y 0. 25 y1 0.7 0 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) fig. 7 diode forward voltage vs. current sd t =125c a t =-55c a t =25c a t =150c a t =85c a i , s o u r c e c u r r e n t ( a ) s l3 l1 l2 e b d e a z b2 a1 seating plane pin #1 id c y1 x1 x g2 y g1
dmn65d8lfb document number: ds 35 5 4 5 rev. 4 - 2 6 of 6 www.diodes.com may 2015 ? diodes incorporated dmn65d8lfb new product important notice diodes incorporated makes no warranty of any kind , express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its su bsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the appl ication or use of this document or any product described herein; neither does diodes incorporated convey any license under it s patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incor porated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in engl ish but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized f or use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intend ed to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that the y have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their produc ts and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully inde mnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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